10.9k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Harvard UniversityUS735 papers
- Massachusetts Institute of TechnologyUS455 papers
- University of OxfordGB379 papers
- University of ChicagoUS368 papers
- University of MichiganUS356 papers
- Lawrence Berkeley National LaboratoryUS354 papers
- The Ohio State UniversityUS350 papers
- Yale UniversityUS348 papers
- University of PittsburghUS317 papers
- Argonne National LaboratoryUS316 papers
- University College LondonGB312 papers
- University of PisaIT310 papers
4 papers · 2 filters
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
J. J. Gu, X. W. Wang, J. Shao +4
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…
Optical measurement and modeling of interactions between two hole or two electron spins in coupled InAs quantum dots
Alex Greilich, Ştefan C. Bădescu, Danny Kim +2
Two electron spins in quantum dots coupled through coherent tunneling are generally acknowledged to approximately obey Heisenberg isotropic exchange. This has not been established…
Zero-bias anomaly in a nanowire quantum dot coupled to superconductors
Eduardo J. H. Lee, Xiaocheng Jiang, Ramon Aguado +3
We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminium superconducting leads. By varying the superconducting gap, Δ, with…