5k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Centre National de la Recherche ScientifiqueFR339 papers
- European Southern ObservatoryCL298 papers
- Center for Astrophysics Harvard & SmithsonianUS294 papers
- University of CambridgeGB274 papers
- Osservatorio Astronomico di PadovaIT271 papers
- University of WarwickGB256 papers
- Stockholm UniversitySE237 papers
- Max Planck Institute for AstrophysicsDE213 papers
- Las Cumbres Observatory Global Telescope NetworkUS211 papers
- AlbaNovaSE210 papers
- Space Telescope Science InstituteUS208 papers
- University of St AndrewsGB193 papers
6 papers · 2 filters
Boron in copper: a perfect misfit in the bulk and cohesion enhancer at a grain boundary
A. Y. Lozovoi, A. T. Paxton
Our ab initio study suggests that boron segregation to the Sigma 5(310)[001] grain boundary should strengthen the boundary up to 1.5 ML coverage (15.24 at/nm^2). The maximal effect…
Magnetic tight-binding and the iron-chromium enthalpy anomaly
A. T. Paxton, M. W. Finnis
We describe a self consistent magnetic tight-binding theory based in an expansion of the Hohenberg-Kohn density functional to second order, about a non spin polarised reference den…
Robust non-adiabatic molecular dynamics for metals and insulators
L. Stella, M. Meister, A. J. Fisher +1
We present a new formulation of the correlated electron-ion dynamics (CEID) scheme, which systematically improves Ehrenfest dynamics by including quantum fluctuations around the me…
On the Newtonian origin of the spin motive force in ferromagnetic atomic wires
Maria Stamenova, Tchavdar N. Todorov, Stefano Sanvito
We demonstrate numerically the existence of a spin-motive force acting on spin-carriers when moving in a time and space dependent internal field. This is the case of electrons in a…
Conformal oxide coating of Carbon Nanotubes
S. Kawasaki, G. Catalan, H. Fan +8
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We r…
Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment
G. Catalan, J. F. Scott, A. Schilling +1
Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita wi…