From the 4 of 78 papers with an AI index.
8 citations
- National University of SingaporeSG7 papers
- Hewlett Packard Enterprise (United States)US5 papers
- Norwegian University of Science and TechnologyNO5 papers
- Zhejiang UniversityCN5 papers
- Chinese Academy of SciencesCN4 papers
- Singapore Management UniversitySG4 papers
- Agency for Science, Technology and ResearchSG3 papers
- China Agricultural UniversityCN3 papers
- Chinese University of Hong KongHK3 papers
- Imperial College LondonGB3 papers
- Jilin UniversityCN3 papers
- Meizu (China)CN3 papers
4 papers · 1 filter
Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe2 for complementary in-memory computing
Ruihan Wang, Pengfei Wang, Haoyun Chen +10
Quantum geometry, describing the inherent geometric structure of electron wavefunctions in momentum space, transcends the traditional charge degree of freedom and provides a novel…
Controlled chemical vapor deposition for synthesis of emerging Mo(W)Te2 systems
Ya Deng, Zi-Yi Han, Yao Wu +6
The Group-VI transition metal ditellurides offer a rich platform for correlated and topological phenomena, yet their structural polymorphism and instability complicate the creation…
Ferroelectric brightening of spin forbidden dark excitons in a WSe2/hybrid perovskite heterostructure
Xinyun Wang, Magdalena Grzeszczyk, Maxim Trushin +14
Long-lived dark excitons in monolayer WSe2 present promising candidates for carrying spin and valley information, but their optical access and spin manipulation have conventionally…
Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications
Yujia Tian, Devesh R. Kripalani, Ming Xue +1
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in…