33 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Aalto UniversityFI2 papers
- Bohai UniversityCN2 papers
- George Washington UniversityUS2 papers
- Tel Aviv UniversityIL2 papers
- Chalmers University of TechnologySE1 paper
- Chinese University of Hong KongHK1 paper
- Fuzhou UniversityCN1 paper
- Loughborough UniversityGB1 paper
- Nanchang UniversityCN1 paper
- Shenzhen Technology UniversityCN1 paper
- Shenzhen UniversityCN1 paper
- Suzhou Research InstituteCN1 paper
5 papers
NEP89: Universal neuroevolution potential for inorganic and organic materials across 89 elements
Ting Liang, Ke Xu, Eric Lindgren +16
While machine-learned interatomic potentials offer near-quantum-mechanical accuracy for atomistic simulations, many are material-specific or computationally intensive, limiting the…
Advances in modeling complex materials: The rise of neuroevolution potentials
Penghua Ying, Cheng Qian, Rui Zhao +4
Interatomic potentials are essential for driving molecular dynamics (MD) simulations, directly impacting the reliability of predictions regarding the physical and chemical properti…
Length-scale study in deep learning prediction for non-small cell lung cancer brain metastasis
Haowen Zhou, Steven, Lin +6
Deep learning assisted digital pathology has the potential to impact clinical practice in significant ways. In recent studies, deep neural network (DNN) enabled analysis outperform…
Second main theorem for holomorphic curves into algebraic varieties intersecting moving hypersurfaces targets
Libing Xie, Tingbin Cao
Since the great work on holomorphic curves into algebraic varieties intersecting hypersurfaces in general position established by Ru in 2009, recently there has been some developme…
Fully Spin-Polarized Current in Gated Bilayer Silicene
Xiao-Fang Ouyang, Ze-Yi Song, Yu-Zhong Zhang
By applying density functional theory calculations, we predict that the groundstate of bilayer silicene at certain interlayer distances can be antiferromagnetic. At small electron…