Temperature-Dependent Dielectric Function of Tantalum Nitride Formed by Atomic Layer Deposition for Tunnel Barriers in Josephson Junctions

Ekta Bhatia, Aaron Lopez Gonzalez, Yoshitha Hettige +9

We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suit…