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University of Nebraska at Omaha

United States

1 paper here1 citations across 1
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  • cond-mat.mtrl-sci1
ROR 04yrkc140OpenAlex

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most citedPoint defect energetics in silicon using the LDA+U method

1 citations

researchers with a paper here
  • D. Physics1 · h 101
  • P. Ramanarayanan1 · h 5
  • R. Sabirianov1 · h 36
  • U. O. Nebraska1 · h 1
collaborating institutions
  • Stanford UniversityUS1 paper

1 paper

cond-mat.mtrl-sci2003★ 1 cited

Point defect energetics in silicon using the LDA+U method

Panchapakesan Ramanarayanan, Renat F. Sabirianov, Kyeongjae Cho

We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density appro…

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