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20022026
most citedSupplementary information for "Quantum supremacy using a programmable superconducting processor"

7.2k citations

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241 papers · 1 filter

cond-mat.mtrl-sci2026

Electrochemical and thermal control of continuous phase transitions in P2-NaxNi1/3Mn2/3O2

Dylan A. Edelman, John Cattermull, Jue Liu +7

Sodium layered oxides often undergo phase transformations involving ordering or disordering of Na+ upon desodiation, i.e., when cycled as a battery electrode. Accurately characteri…

cond-mat.mtrl-sci2026★ 5 cited

Atomistic and data-driven insights into the local slip resistances in random refractory multi-principal element alloys

Wu-Rong Jian, Arjun S. Kulathuvayal, Hanfeng Zhai +5

Refractory multi-principal element alloys (RMPEAs) have attracted growing interest for their exceptional high-temperature strength, yet their complex compositions hinder a mechanis…

cond-mat.mtrl-sci2025★ 1 cited

Resonant states and nuclear dynamics in solid-state systems: the case of silicon-hydrogen bond dissociation

Woncheol Lee, Mark E. Turiansky, Dominic Waldhör +3

Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, act…

cond-mat.mtrl-sci2025

Electric-Field-Dependent Thermal Conductivity in Fresh and Aged Bulk Single Crystalline

Fanghao Zhang, Guanchun Rui, Yujie Quan +4

Active thermal management requires advances in thermal switching materials, whose thermal conductivity responds to external stimuli. The electric field, as one of the most convenie…

cond-mat.mtrl-sci2025

Effect of Concentration Fluctuations on Material Properties of Disordered Alloys

Han-Pu Liang, Chuan-Nan Li, Xin-Ru Tang +4

Alloying compound AX with another compound BX is widely used to tune material properties. For disordered alloys, due to the lack of periodicity, it has been challenging to calculat…

cond-mat.mtrl-sci2025★ 5 cited

A CN complex as an alternative to the T center in Si

J. K. Nangoi, M. E. Turiansky, C. G. Van de Walle

We present a first-principles study of a carbon-nitrogen (CN) impurity complex in silicon as an isoelectronic alternative to the T center [(CCH)]. The latter has been…