output
19952025
most citedProduction, properties and potential of graphene

1.8k citations

Showing 2023Show all

10 papers · 1 filter

cond-mat.mtrl-sci2023★ 7 cited

Heteroepitaxial growth of anatase (0 0 1) films on SrTiO3 (0 0 1) by PLD and MBE

A. Crespo, J. Gallenberger, Maurizio de Santis +5

The epitaxial growth of anatase (001) films deposited by pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) on SrTiO3 (001) (STO) single crystals has been studied using…

cond-mat.mtrl-sci2023★ 2 cited

X-ray diffraction study of epitaxial CuO nanostructures obtained through post-deposition annealing of Cu on SrTiO(001)

Maurizio de Santis, Veronique Langlais, Lucio Martinelli +3

Orientation, structure and morphology in the early growth stages of CuO films on strontium titanate were studied by synchrotron radiation X-ray diffraction. Nanostructured CuO film…

cs.CV2023★ 5 cited

Instance Segmentation of Dislocations in TEM Images

Karina Ruzaeva, Kishan Govind, Marc Legros +1

Quantitative Transmission Electron Microscopy (TEM) during in-situ straining experiment is able to reveal the motion of dislocations -- linear defects in the crystal lattice of met…

cond-mat.mtrl-sci2023★ 13 cited

Proposal for all-electrical skyrmion detection in van der Waals tunnel junctions

Dongzhe Li, Soumyajyoti Haldar, Stefan Heinze

A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we…

quant-ph2023★ 43 cited

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

T. Clua-Provost, A. Durand, Z. Mu +12

We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first…

cond-mat.mes-hall2023★ 25 cited

Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction

Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos +13

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Tran…