most citedDevelopment of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

17 citations

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1 paper

physics.app-ph2022★ 17 cited

Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Daniel Schmidt, Aron Cepler, Curtis Durfee +7

Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are…