43 citations
- Institute of SemiconductorsCN3 papers
- Xiamen UniversityCN3 papers
- Xiamen University of TechnologyCN3 papers
- Chinese Academy of SciencesCN2 papers
- Central China Normal UniversityCN1 paper
- China Three Gorges UniversityCN1 paper
- China University of GeosciencesCN1 paper
- China West Normal UniversityCN1 paper
- Engineering (Italy)IT1 paper
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- Handan CollegeCN1 paper
- Horia Hulubei National Institute for R and D in Physics and Nuclear EngineeringRO1 paper
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cond-mat.mtrl-sci2024★ 1 cited
Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing
Ruijun Zhang, Mingkun Zhang, Guoliang Zhang +12
A minority carrier lifetime of 25.46 s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance t…
physics.optics2024★ 5 cited
Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations
Zhao Fu, Meng Yuan, Jiafa Cai +14
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. Howeve…
physics.app-ph2024
A Light-Emitting-Diodes-Integrated Silicon Carbide Insulated Gate Bipolar Transistor
Guoliang Zhang, Zhanwei Shen, Yujian Chen +3
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the ph…