304 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Ames Research CenterUS28 papers
- Research Institute for Advanced Computer ScienceUS13 papers
- University of Maryland, College ParkUS6 papers
- Goddard Space Flight CenterUS5 papers
- University of California, BerkeleyUS5 papers
- Google (United States)US4 papers
- United States Air Force Research LaboratoryUS4 papers
- Wright-Patterson Air Force BaseUS4 papers
- California Institute of TechnologyUS3 papers
- Catholic University of AmericaUS3 papers
- HeliophysicsUS3 papers
- Joint Center for Quantum Information and Computer ScienceUS3 papers
Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2026
Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +12
In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The…
physics.app-ph2020★ 35 cited
Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer
Michael J. Motala, Eric Blanton, Al Hilton +8
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufac…