205 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Novosibirsk State UniversityRU17 papers
- Siberian Branch of the Russian Academy of SciencesRU11 papers
- Russian Academy of SciencesRU9 papers
- Institute of Semiconductor PhysicsRU6 papers
- Nikolaev Institute of Inorganic ChemistryRU5 papers
- CJSC Ekran FEP (Russia)RU3 papers
- Hiroshima UniversityJP3 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU3 papers
- Institute of Strength Physics and Materials ScienceRU3 papers
- Lomonosov Moscow State UniversityRU3 papers
- Novosibirsk State Technical UniversityRU3 papers
- Southern Federal UniversityRU3 papers
4 papers · 1 filter
Spin texture tunability in MnGeBiTe through varying Ge Concentration
A. M. Shikin, D. A. Estyunin, N. L. Zaitsev +10
The spin-resolved dispersion dependencies for the topological insulator MnGeBiTe in the path of the Brillouin zone were studied b…
The influence of constriction on the motion of graphene kinks
D. C. Nguyen, R. D. Yamaletdinov, Y. V. Pershin
Graphene kinks are topological states of buckled graphene membranes. We show that when a moving kink encounters a constriction, there are three general classes of behavior: reflect…
Kinks in buckled graphene uncompressed and compressed in the longitudinal direction
R. D. Yamaletdinov, Y. V. Pershin
In this Chapter we provide a review of the main results obtained in the modeling of graphene kinks and antikinks, which are elementary topological excitations of buckled graphene m…
Origin of defects responsible for charge transport in resistive random access memory based on hafnia
Damir R. Islamov, T. V. Perevalov, V. A. Gritsenkov +7
A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile fla…