394 citations
- Novosibirsk State UniversityRU229 papers
- Russian Academy of SciencesRU165 papers
- Siberian Branch of the Russian Academy of SciencesRU99 papers
- Universidade de São PauloBR68 papers
- Centre National de la Recherche ScientifiqueFR58 papers
- Ioffe InstituteRU54 papers
- Novosibirsk State Technical UniversityRU54 papers
- University of RegensburgDE50 papers
- Institute for Basic ScienceKR34 papers
- V.S. Sobolev Institute of Geology and MineralogyRU27 papers
- Ural Federal UniversityRU26 papers
- Argonne National LaboratoryUS24 papers
43 papers · 1 filter
Microwave-induced zero-resistance states in a high-mobility two-subband electron system
A. A. Bykov, A. V. Goran, A. K. Bakarov
In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons…
Giant terahertz photoconductance of tunneling point contacts
M. Otteneder, Z. D. Kvon, O. A. Tkachenko +5
We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/Al…
Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure
V. A. Prudkoglyad, E. B. Olshanetsky, Z. D. Kvon +3
We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic…
Two dimensional topological insulator in quantizing magnetic fields
E. B. Olshanetsky, Z. D. Kvon, G. M. Gusev +2
The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). T…
A comment on "Different STM Images of the Superstructure on a Clean Si(133)-6x2 Surface" (JETP Letters 105 (8), 477-483 (2017))
R. Zhachuk, J. Coutinho
In the recent paper by Teys [JETP Letters 105 (8), 477-483 (2017)], an atomic model for the Si(331) reconstructed surface (hereby referred to as T-model) was proposed on the basis…
Landau level spectroscopy of valence bands in HgTe quantum wells: Effects of symmetry lowering
L. S. Bovkun, A. V. Ikonnikov, V. Ya. Aleshkin +8
Landau level spectroscopy has been employed to probe the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted orde…