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- University of California, BerkeleyUS220 papers
- Lawrence Berkeley National LaboratoryUS214 papers
- National Institute for Materials ScienceJP38 papers
- Molecular Foundry35 papers
- Stanford UniversityUS28 papers
- SLAC National Accelerator LaboratoryUS24 papers
- California Institute of TechnologyUS21 papers
- Weizmann Institute of ScienceIL15 papers
- Advanced Light Source14 papers
- Chinese Academy of SciencesCN14 papers
- Delft University of TechnologyNL14 papers
- Fudan UniversityCN14 papers
8 papers · 2 filters
Large bulk photovoltaic effect and spontaneous polarization of single-layer monochalcogenides
Tonatiuh Rangel, Benjamin M. Fregoso, Bernardo S. Mendoza +3
We use a first-principles density functional theory approach to calculate the shift current and linear absorption of uniformly illuminated single-layer Ge and Sn monochalcogenides.…
Gate-Variable Mid-Infrared Optical Transitions in a Topological Insulator
William S. Whitney, Victor W. Brar, Yunbo Ou +6
We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectanc…
Imaging electrostatically confined Dirac fermions in graphene quantum dots
Juwon Lee, Dillon Wong, Jairo Velasco +9
Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisot…
Resonant Thermoelectric Nanophotonics
Kelly W. Mauser, Slobodan Mitrovic, Seyoon Kim +2
Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorptio…
Interplay of bias-driven charging and the vibrational Stark effect in molecular junctions
Yajing Li, Pavlo Zolotavin, Peter Doak +3
We observe large, reversible, bias driven changes in the vibrational energies of PCBM, based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements o…
Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons
Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin +21
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tu…