1.8k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- University of Colorado BoulderUS112 papers
- Colorado School of MinesUS59 papers
- King's College LondonGB30 papers
- Lawrence Berkeley National LaboratoryUS28 papers
- Fudan UniversityCN17 papers
- Radboud University NijmegenNL15 papers
- Stanford UniversityUS15 papers
- University of MinnesotaUS15 papers
- University of California, BerkeleyUS14 papers
- Colorado State UniversityUS13 papers
- North Carolina State UniversityUS12 papers
- Princeton UniversityUS12 papers
5 papers · 2 filters
Ternary Nitride Materials: Fundamentals and Emerging Device Applications
Ann L. Greenaway, Celeste L. Melamed, M. Brooks Tellekamp +4
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of a…
Chemical Bonding Governs Complex Magnetism in MnPt5P
Xin Gui, Ryan A. Klein, Craig M. Brown +1
Subtle changes in chemical bonds may result in dramatic revolutions in magnetic properties in solid state materials. MnPt5P, a new derivative of the rare-earth-free ferromagnetic M…
Synthesis of tunable nanoscale superlattices
Dennice M. Roberts, Dylan Bardgett, John D. Perkins +3
Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties…
Hopf solitons in helical and conical backgrounds of chiral magnetic solids
Robert Voinescu, Jung-Shen B. Tai, Ivan I. Smalyukh
Three-dimensional topological solitons attract a great deal of interest in fields ranging from particle physics to cosmology but remain experimentally elusive in solid-state magnet…
Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy
M. Brooks Tellekamp, Celeste L. Melamed, Andrew G. Norman +1
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly…