107 citations
- Technische Universität DresdenDE17 papers
- Helmholtz-Zentrum Dresden-RossendorfDE4 papers
- Max Bergmann Zentrum für BiomaterialienDE4 papers
- Chemnitz University of TechnologyDE3 papers
- Dresden Center for Computational Materials ScienceDE3 papers
- Leibniz Institute for Solid State and Materials ResearchDE3 papers
- AGH University of KrakowPL2 papers
- Columbia UniversityUS2 papers
- Italian Institute of TechnologyIT2 papers
- Max Planck Institute for the Physics of Complex SystemsDE2 papers
- Wrocław University of Science and TechnologyPL2 papers
- Academy of Sciences of MoldovaMD1 paper
5 papers · 1 filter
Edge magnetism impact on electrical conductance and thermoelectric properties of graphenelike nanoribbons
Stefan Krompiewski, Gianaurelio Cuniberti
Edge states in narrow quasi two-dimensional nanostructures determine, to a large extent, their electric, thermoelectric and magnetic properties. Non-magnetic edge states may quite…
Chemical and Electronic Repair Mechanism of Sulfur Defects in MoS Monolayers
Anja Förster, Sibylle Gemming, Gotthard Seifert +1
Using {\em ab initio} density functional theory calculations, we characterize changes in the electronic structure of MoS monolayers introduced by missing or additional adsorb…
A Dynamically Diluted Alignment Model Reveals the Impact of Cell Turnover on the Plasticity of Tissue Polarity Patterns
Karl B. Hoffmann, Anja Voss-Böhme, Jochen C. Rink +1
The polarisation of cells and tissues is fundamental for tissue morphogenesis during biological development and regeneration. A deeper understanding of biological polarity pattern…
Theoretical investigation of an in situ k-restore process for damaged ultra-low-k materials based on plasma enhanced fragmentation
A. Förster, C. Wagner, S. Gemming +1
We present theoretical investigations of a k-restore process for damaged pourous ultra-low-k (ULK) materials. The process is based on plasma enhanced fragmented silylation precurso…
Characteristics of ferroelectric-ferroelastic domains in N{é}el-type skyrmion host GaVS
Ádám Butykai, Sándor Bordács, István Kézsmárki +6
GaVS is a multiferroic semiconductor hosting N{é}el-type magnetic skyrmions dressed with electric polarization. At T = 42K, the compound undergoes a structural phase tr…