2.6k citations
- Institute of Microelectronics Technology and High Purity MaterialsRU2 papers
- National University of SingaporeSG2 papers
- Radboud University NijmegenNL2 papers
- University of ManchesterGB2 papers
- University of MinhoPT2 papers
- University of NottinghamGB2 papers
- Astronomy and SpaceAU1 paper
- Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of UkraineUA1 paper
2 papers
cond-mat.mes-hall2012★ 920 cited
Atomically thin boron nitride: a tunnelling barrier for graphene devices
Liam Britnell, Roman V. Gorbachev, Rashid Jalil +12
We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well…
cond-mat.mes-hall2011★ 2.6k cited
Field-effect tunneling transistor based on vertical graphene heterostructures
L. Britnell, R. V. Gorbachev, R. Jalil +10
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devi…