947 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Centre National de la Recherche ScientifiqueFR486 papers
- Université de StrasbourgFR421 papers
- Institut de Science et d'Ingénierie SupramoléculairesFR85 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR40 papers
- Université Paris-SaclayFR33 papers
- Universität InnsbruckAT26 papers
- CEA Paris-SaclayFR25 papers
- Karlsruhe Institute of TechnologyDE25 papers
- University of AugsburgDE22 papers
- Université de LorraineFR21 papers
- Institut Jean LamourFR20 papers
- Synchrotron SOLEILFR19 papers
6 papers · 2 filters
The 2014 Magnetism Roadmap
Robert L. Stamps, Stephan Breitkreutz, Johan Åkerman +11
Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new…
Conductivity in organic semiconductors hybridized with the vacuum field
E. Orgiu, J. George, J. A. Hutchison +10
Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However tech…
Multistate nonvolatile straintronics controlled by a lateral electric field
V. Iurchuk, B. Doudin, B. Kundys
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant stra…
Subcoercive and multilevel ferroelastic remnant states with resistive readout
B. Kundys, V. Iurchuk, C. Meny +2
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical qu…
Taming the resistive switching in Fe/MgO/V/Fe magnetic tunnel junctions: An ab initio study
J. M. Aguiar-Hualde, M. Alouani
A possible mechanism for the resistive switching observed experimentally in Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within the local density approxi…
Solution-Processable Graphene Oxide as an Efficient Hole Injection Layer for High Luminance Organic Light-Emitting Diodes
Shengwei Shi, Veera Sadhu, Reda Moubah +3
The application of solution-processable graphene oxide (GO) as hole injection layer in organic light-emitting diodes (OLEDs) is demonstrated. High luminance of over 53,000 cd m-2 i…