744 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- V. A. Sablikov41 · h 11
- K. Nagaev32 · h 13
- S. Zaitsev-Zotov30 · h 15
- A. Volkov2 profiles29 · h 30
- P. Monceau2 profiles27 · h 37
- V. Koshelets2 profiles26 · h 31
- D. S. Shapiro25 · h 10
- V. Enaldiev2 profiles22 · h 16
- Vladimir A. Volkov21 · h 14
- A. Sinchenko2 profiles20 · h 12
- S. Nikitov3 profiles20 · h 33
- S. Artemenko19 · h 17
- Russian Academy of SciencesRU201 papers
- Moscow Institute of Physics and TechnologyRU95 papers
- Centre National de la Recherche ScientifiqueFR40 papers
- Lomonosov Moscow State UniversityRU40 papers
- National University of Science and TechnologyRU39 papers
- Saratov State UniversityRU31 papers
- Landau Institute for Theoretical PhysicsRU29 papers
- All Russia Research Institute of AutomaticsRU27 papers
- National Research University Higher School of EconomicsRU27 papers
- Ruhr University BochumDE24 papers
- Karlsruhe Institute of TechnologyDE22 papers
- National Research Nuclear University MEPhIRU20 papers
Showing 1999 · cond-mat.mtrl-sciShow all
2 papers · 2 filters
cond-mat.mtrl-sci1999★ 3 cited
Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures
V. A. Kulbachinskii, V. G. Kytin, A. V. Golikov +5
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densitie…
cond-mat.mtrl-sci1999★ 5 cited
Sn delta-doping in GaAs
V. A. Kulbachinskii, V. G. Kytin, R. A. Lunin +7
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping dens…