3.1k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Centre National de la Recherche ScientifiqueFR349 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR326 papers
- Thomas Jefferson National Accelerator FacilityUS290 papers
- Institut National de Physique Nucléaire et de Physique des ParticulesFR289 papers
- Florida State UniversityUS287 papers
- University of VirginiaUS279 papers
- William & MaryUS257 papers
- George Washington UniversityUS253 papers
- A. Alikhanyan National LaboratoryAM251 papers
- Argonne National LaboratoryUS250 papers
- Florida International UniversityUS246 papers
- Carnegie Mellon UniversityUS241 papers
4 papers · 2 filters
Band-gap switching and scaling of nanoperforated graphene
Haiyuan Chen, Xiaobin Niu
In this paper, a framework of {w_1, w_2, R} classification for constructing the graphene nanomesh (GNM) of zigzag-edged hexagonal nanohole is systematically built. The three intege…
Concurrent growth and formation of electrically contacted monolayer transition metal dichalcogenides on bulk metallic patterns
Sudiksha Khadka, Miles Lindquist, Shrouq Aleithan +4
While new species and properties of two-dimensional (2D) materials are being reported with extraordinary regularity, a significant bottleneck in the field is the ability to control…
Ab initio model of amorphous zinc oxide (a-ZnO) and a-X_0.375 Z_0.625 O (X=Al, Ga and In)
Anup Pandey, Heath Scherich, D. A. Drabold
Density functional theory (DFT) calculations are carried out to study the structure and electronic structure of amorphous zinc oxide (a-ZnO). The models were prepared by the "melt-…
Realistic inversion of diffraction data for an amorphous solid: the case of amorphous silicon
Anup Pandey, Parthapratim Biswas, Bishal Bhattarai +1
We apply a new method "force enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a-Si), based upon the highly precise X-ray diffraction experiments…