498 citations
- ETH ZurichCH9 papers
- Centre National de la Recherche ScientifiqueFR7 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR5 papers
- Max Planck Institute for PhysicsDE5 papers
- Columbia UniversityUS4 papers
- Swiss Light Source4 papers
- University of GenevaCH4 papers
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- Rutherford Appleton LaboratoryGB3 papers
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14 papers · 1 filter
Imaging the antiparallel magnetic alignment of adjacent Fe and MnAs thin films
R. Breitwieser, M. Marangolo, J. Luning +5
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission…
Soft Modes and Relaxor Ferroelectrics
R. A. Cowley, S. N. Gvasaliya, B. Roessli
Relaxor ferroelectrics are difficult to study and understand. The experiment shows that at low energy scattering there is an acoustic mode, an optic mode, dynamic quasi-elastic sca…
Unit cell of graphene on Ru(0001): a 25 x 25 supercell with 1250 carbon atoms
D. Martoccia, P. R. Willmott, T. Brugger +10
The structure of a single layer of graphene on Ru(0001) has been studied using surface x-ray diffraction. A surprising superstructure has been determined, whereby 25 x 25 graphene…
^{63,65}Cu NMR and NQR evidence for an unusual spin dynamics in PrCu_2 below 100 K
A. Sacchetti, M. Weller, J. L. Gavilano +7
We report the results of a Cu NMR/NQR study probing the intermetallic compound PrCu. The previously claimed onset of magnetic order at 65 K, indicated in a SR stud…
Resistive Switching in Cr doped SrTiO3: An X-ray Absorption Spectroscopy study
B. P. Andreasson, M. Janousch, U. Staub +2
X-ray absorption spectroscopy was used to study the microscopic origin of conductance and resistive switching in chromium doped strontium titanate (Cr:SrTiO3). Differences in the x…
Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory
M. Janousch, G. I. Meijer, U. Staub +3
Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change…