415 citations
- Humboldt-Universität zu BerlinDE51 papers
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Showing 2020 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2020★ 22 cited
Selective-area van der Waals epitaxy of h-BN/graphene heterostructures via He irradiation-induced defect-engineering in 2D substrates
Martin Heilmann, Victor Deinhart, Abbes Tahraoui +2
The combination of two-dimensional (2D) materials into heterostructures enabled the formation of atomically thin devices with designed properties. To achieve a high density, bottom…
cond-mat.mtrl-sci2020★ 18 cited
Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects
Ivan Gamov, Eberhard Richter, Markus Weyers +10
Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds , the carbon atoms increasingly form triatomic cluster…