1.3k citations
- Madrid Institute for Advanced StudiesES71 papers
- Donostia International Physics CenterES57 papers
- Universidad Autónoma de MadridES54 papers
- University of ManchesterGB51 papers
- Consejo Superior de Investigaciones CientíficasES37 papers
- Instituto de Ciencia de Materiales de MadridES37 papers
- Universidad Complutense de MadridES28 papers
- Centre National de la Recherche ScientifiqueFR23 papers
- IkerbasqueES18 papers
- Delft University of TechnologyNL11 papers
- Universität HamburgDE11 papers
- Universidad de ZaragozaES9 papers
5 papers · 2 filters
Mode-Resolved Multiband Ballistic Transport and Conductance Thresholds in Bilayer Graphene Junctions
Dan-Na Liu, Jun Zheng, Pierre A. Pantaleon
We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron tr…
Structural and electronic signatures of strain-tunable marginally twisted bilayer graphene
Pei Ouyang, Jiawei Yu, Qian Li +11
Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limi…
Straintronics and twistronics in bilayer graphene
Federico Escudero, Dong Wang, Pierre A. Pantaleón +3
The interplay of twist and strain in bilayer graphene enables the formation of moiré patterns and narrow bands that host correlated and topological phases. While magic-angle twiste…
Mode-selective cloaking and phase-matching cavity resonances in bilayer graphene transport
Dan-Na Liu, Jun Zheng, Pierre A. Pantaleon
We study ballistic electron transport through electrostatic barriers in AB-stacked bilayer graphene within a full four-band framework. A mode-resolved analysis reveals how propagat…
Moiré-driven equilibrium of perturbations in moiré systems
Federico Escudero, Zhen Zhan, Pierre A. Pantaleón +1
Perturbations in moiré materials, such as due to substrates or strain, are common in many experiments and can significantly modify the electronic properties of the system. Here, we…