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4 papers · 2 filters
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering
Hao Xiong, Huazhang Zhang, Liang Shu +16
Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic cont…
SAM Molecular Stacking with Heterogeneous Orientationfor High-Performance Perovskite Photovoltaics
Lei Huang, Kai-Li Wang, Zhang Chen +11
This study demonstrates that thermal-evaporated SAM (eSAM) films, particularly in a thick configuration, spontaneously adopt a heterogeneous molecular orientation, forming a vertic…
Microstructural origin of the simultaneous enhancements in strength and ductility of a nitrogen-doped high-entropy alloy
Xiaoxiang Wu, Zhujun Sun, Wenqi Guo +9
As one of the most abundant interstitial elements, nitrogen (N) is effective in improving yield strength of metallic materials, due to interstitial solid solution strengthening. Do…
2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
Yuxuan Jiang, Xingkun Ning, Renhui Liu +17
2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate…