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- Scuola Internazionale Superiore di Studi AvanzatiIT390 papers
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72 papers · 1 filter
Electronic properties of type-II Weyl semimetal WTe. A review perspective
P. K. Das, D. Di Sante, F. Cilento +17
Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and…
Towards high-temperature coherence-enhanced transport in few-atomic layers heterostructures
Chahan M. Kropf, Angelo Valli, Paolo Franceschini +4
The possibility to exploit quantum coherence to strongly enhance the efficiency of charge transport in solid state devices working at ambient conditions would pave the way to disru…
Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model
Sharareh Sayyad, Naoto Tsuji, Abolhassan Vaezi +3
We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of t…
Rashba-metal to Mott-insulator transition
Valentina Brosco, Massimo Capone
The recent discovery of materials featuring strong Rashba spin-orbit coupling (RSOC) and strong electronic correlation raises questions about the interplay of Mott and Rashba physi…
Two-particle Fermi liquid parameters at the Mott transition: Vertex divergences, Landau parameters, and incoherent response in dynamical mean-field theory
Friedrich Krien, Erik G. C. P. van Loon, Mikhail I. Katsnelson +2
We consider the interaction-driven Mott transition at zero temperature from the viewpoint of microscopic Fermi liquid theory. To this end, we derive an exact expression for the Lan…
Ripple morphology of graphitic surfaces: a comparison between few-layer graphene and HOPG
N. Haghighian, D. Convertino, V. Miseikis +5
The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous so…