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International Centre for Materials Physics

China

1 paper here28 citations across 1
fields
  • cond-mat.mtrl-sci1
ROR 04gpjfg13OpenAlex

affiliations via OpenAlex

most cited2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth

28 citations

researchers with a paper here
  • Biaohong Huang1 · h 10
  • Bing Li1 · h 6
  • Chengbing Qin1 · h 3
  • Fei Xue1 · h 16
  • Gang Liu1 · h 18
  • Haoyue Deng1 · h 5
  • Jianhang Qiu1 · h 7
  • Ke Song1 · h 17
  • Lain‐Jong Li1 · h 16
  • Qiankun Li1 · h 12
  • Renhui Liu1 · h 3
  • Sajjad Ali1 · h 11
collaborating institutions
  • Chinese Academy of SciencesCN1 paper
  • Hebei UniversityCN1 paper
  • Institute of Metal ResearchCN1 paper
  • National University of SingaporeSG1 paper
  • Prince Sultan UniversitySA1 paper
  • Shandong UniversityCN1 paper
  • Shanxi UniversityCN1 paper
  • Shenyang University of TechnologyCN1 paper
  • Soochow UniversityCN1 paper
  • South China Normal UniversityCN1 paper
  • University of JinanCN1 paper
  • University of Science and Technology of ChinaCN1 paper

1 paper

cond-mat.mtrl-sci2026★ 28 cited

2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth

Yuxuan Jiang, Xingkun Ning, Renhui Liu +17

2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate…

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