Publications (4)
Programmable quantum emitter formation in silicon
K. Jhuria, V. Ivanov, D. Polley +12
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long sp…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…