Publications (9)
Qubit-qudit entanglement transfer in defect centers with high-spin nuclei
W. -R. Hannes, Guido Burkard
We propose a scheme for accumulating entanglement between long-lived qudits provided by central nuclear spins of defect centers. Assuming a generic setting, the electron spin of ea…
Finite-temperature Bell test for quasiparticle entanglement in the Fermi sea
W. -R. Hannes, M. Titov
We demonstrate that the Bell test cannot be realized at finite temperatures in the vast majority of electronic setups proposed previously for quantum entanglement generation. This…
Electron-hole asymmetry in two-terminal graphene devices
W. -R. Hannes, M. Jonson, M. Titov
A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independen…
Ballistic charge transport in chiral-symmetric few-layer graphene
W. -R. Hannes, M. Titov
A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symm…
Non-Degenerate Two-Photon Absorption in ZnSe: Experiment and Theory
L. Krauss-Kodytek, W. -R. Hannes, T. Meier +2
We experimentally and theoretically investigate the non-degenerate two-photon absorption coefficient in the prototypical semiconductor ZnSe. In particular, we provi…
Fidelity of photon-mediated entanglement between remote nuclear-spin multi-qubit registers
W. -R. Hannes, Regina Finsterhoelzl, Guido Burkard
The electron spin of a nitrogen-vacancy center in diamond lends itself to the control of proximal C nuclear spins via dynamical decoupling methods, possibly combined with ra…
Two-photon absorption in semiconductors: a multi-band length-gauge analysis
W. -R. Hannes, M. F. Ciappina
The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, parti…
Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point
S. Gattenloehner, W. -R. Hannes, P. M. Ostrovsky +3
We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scala…
Higher-order contributions and non-perturbative effects in the non-degenerate nonlinear optical absorption of direct-gap semiconductors
W. -R. Hannes, T. Meier
The semiconductor Bloch equations for a two-band model including inter- and intraband excitation are used to study the nonlinear absorption of single and multiple light pulses by d…