Publications (8)
Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect
P. Kühne, V. Darakchieva, J. D. Tedesco +8
We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown…
Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content AlGaN alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect
S. Schöche, T. Hofmann, D. Nilsson +6
The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content AlGaN alloys in dependence of the Al content are p…
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3
Prashanth Gopalan, Sean Knight, Ashish Chanana +11
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals
M. Schubert, R. Korlacki, S. Knight +14
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared…
Electron effective mass in AlGaN alloys determined by mid-infrared optical Hall effect
S. Schöche, P. Kühne, T. Hofmann +5
The effective electron mass parameter in Si-doped AlGaN is determined to be from mid-infrared optical Hall effect measurements. No s…
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…