Publications (8)
Lasing in Group-IV materials
V. Reboud, D. Buca, H. Sigg +6
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for…
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud, A. Gassenq, N. Pauc +13
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For i…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…
Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J. -B. Jager, V. Calvo +13
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling betwee…
Uniaxially stressed germanium with fundamental direct band gap
R. Geiger, T. Zabel, E. Marin +17
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…
Spin injection in Silicon at zero magnetic field
L. Grenet, M. Jamet, P. Noé +7
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagne…