Publications (15)
Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
R. Maiti, C. Patil, T. Xie +10
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-base…
Theoretical overview of black phosphorus
Andrey Chaves, W. Ji, J. Maassen +2
We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated…
Band structure and gaps of triangular graphene superlattices
F. Guinea, T. Low
General properties of long wavelength triangular graphene superlattice are studied. It is shown that Dirac points with and without gaps can arise at a number of high symmetry point…
Anisotropic Strain Relaxation-Induced Directional Ultrafast Carrier Dynamics in RuO2 Films
S. G. Jeong, I. H. Choi, S. Lee +9
Ultrafast light-matter interactions inspire potential functionalities in picosecond optoelectronic applications. However, achieving directional carrier dynamics in metals remains c…
Anomalous Reflection Phase of Graphene Plasmons and its Influence on Resonators
A. Yu. Nikitin, T. Low, L. Martin-Moreno
The phase picked up by a graphene plasmon upon scattering by an abrupt edge is commonly assumed to be . Here, it is demonstrated that for high plasmon momenta this reflection…
Anisotropic exciton Stark shift in black phosphorus
Andrey Chaves, T. Low, P. Avouris +2
We calculate the excitonic spectrum of few-layer black phosphorus by direct diagonalization of the effective mass Hamiltonian in the presence of an applied in-plane electric field.…