Publications (22)
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
T. Kodera, T. Ferrus, T. Nakaoka +4
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements u…
Detection of charge motion in a non-metallic silicon isolated double quantum dot
T. Ferrus, A. Rossi, M. Tanner +3
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the m…
Cryogenic instrumentation for fast current measurement in a silicon single electron transistor
T. Ferrus, D. G. Hasko, Q. R. Morrissey +8
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-freq…
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer.…
Electron temperature in electrically isolated Si double quantum dots
A. Rossi, T. Ferrus, D. A. Williams
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated doubl…
Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots
M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella +2
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensi…
Optimized minigaps for negative differential resistance creation in strongly delta-doped (1D) superlattices
T. Ferrus, B. Goutiers, L. Ressier +3
The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire…
Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the…
Activation mechanisms in sodium-doped Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the pres…
GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov de Haas oscillations
T. Ferrus, B. Goutiers, J. Galibert +2
Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. Th…
Engineering single donor detectors in doped silicon
A. A. Lasek, C. H. W. Barnes, T. Ferrus
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structu…
Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors
T. Ferrus, R. George, C. H. W. Barnes +1
We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at…
An optimal single-electron charge qubit for solid-state double quantum dots
J. Mosakowski, E. T. Owen, T. Ferrus +3
We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU ac…
Charge Detection in Phosphorus-doped Silicon Double Quantum Dots
A. Rossi, T. Ferrus, G. J. Podd +1
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electr…
Study and characterization by magnetophonon resonance of the energy structuring in GaAs/AlAs quantum-wire superlattices
T. Ferrus, B. Goutiers, L. Ressier +4
We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The sa…
Broadening processes in GaAs delta-doped quantum wire superlattices
T. Ferrus, B. Goutiers, J. Galibert +1
We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum w…
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
T. Ferrus, A. Rossi, W. Lin +3
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within…
GHz photon-activated hopping between localized states in a silicon quantum dot
T. Ferrus, A. Rossi, A. Andreev +5
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the…
Detection of variable tunneling rates in silicon quantum dots
A. Rossi, T. Ferrus, W. Lin +3
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing…
Single shot measurement of a silicon single electron transistor
D. G. Hasko, T. Ferrus, Q. R. Morrissey +8
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temp…
Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators
N. B. Devlin, T. Ferrus, C. H. W. Barnes
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetis…
Variation of the hopping exponent in disordered silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was…