Publications (6)
Graphene Contacts to a HfSe2/SnS2 Heterostructure
Shanshan Su, Protik Das, Supeng Ge +1
Placing graphene on SnS2 results in significant charge transfer, on the order of 10^13/cm^2, from the graphene to the SnS2, and the charge transfer results in a negative Schottky b…
Interlayer Resistance of Misoriented MoS2
Kuan Zhou, Darshana Wickramaratne, Supeng Ge +3
Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic band structure, and the vibrational modes, but, its effect on the inter…
Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
Supeng Ge, K. M. Masum Habib, Amrit De +4
Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle of the h-BN with…
Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
Shi Che, Petr Stepanov, Supeng Ge +13
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…
Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene
Yanmeng Shi, Shi Che, Kuan Zhou +8
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topolog…
The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite
K. M. Masum Habib, Somaia S. Sylvia, Supeng Ge +2
The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistan…