Publications (33)
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable GeSn0
Salim Abdi, Simone Assali, Mahmoud R. M. Atalla +3
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fa…
Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Simone Assali, Alain Dijkstra, Anis Attiaoui +3
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. W…