Publications (26)
Exfoliation energy, quasi-particle bandstructure, and excitonic properties of selenium and tellurium atomic chains
Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo +3
Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Abdulla Said Ali +13
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth…
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…