wovepaper — the arXiv observatory

papers

Publications (2)

cond-mat.mes-hall2015

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran +9

Here, we present a temperature ( $T$ ) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe $_{2}$ exfoliated onto SiO $_{2}$ .…

cond-mat.mes-hall2013

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$

N. R. Pradhan, D. Rhodes, Q. Zhang +4

By fabricating and characterizing multi-layered MoS $_{2}$ -based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations…

Publications (2)

Hall and field-effect mobilities in few layered p-WSe2​ field-effect transistors

Intrinsic carrier mobility of multi-layered MoS2​ field-effect transistors on SiO2​

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$