Publications (6)
Correction of systematic errors in scanning tunnelling spectra on semiconductor surfaces: the energy gap of Si(111)-7x7 at 0.3 K
S. Modesti, H. Gutzmann, J. Wiebe +1
The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected…
Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface
A. Stroppa, X. Duan, M. Peressi +2
We present a combined experimental and computational study of the (110) cross-sectional surface of Mn -doped GaAs samples. We focus our study on three different selected Mn def…
The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)
L. Petaccia, L. Floreano, A. Goldoni +7
Growing attention has been drawn in the past years to the α-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room t…
Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction
L. Petaccia, L. Floreano, M. Benes +6
At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3)…
Low-Temperature Insulating Phase of the Si(111)--77 Surface
S. Modesti, P. M. Sheverdyaeva, P. Moras +5
We investigated the electronic structure of the Si(111)--77 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calcu…
Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures
G. Vinai, C. Bigi, A. Rajan +11
Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system…