Publications (6)
Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
P. Nigge, A. C. Qu, Ã. Lantagne-Hurtubise +14
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and…
Introducing strong correlation effects into graphene by gadolinium intercalation
S. Link, S. Forti, A. Stöhr +11
Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such doping levels are reach…
Enhanced electron-phonon coupling in graphene with periodically distorted lattice
E. Pomarico, M. Mitrano, H. Bromberger +11
Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enh…
Intercalation of graphene on SiC(0001) via ion-implantation
A. Stöhr, S. Forti, S. Link +4
Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable.…
The dimpling in the CuO_2 planes of YBa_2Cu_3O_x (x=6.806-6.984, T=20-300 K) measured by yttrium EXAFS
J. Röhler, S. Link, K. Conder +1
The dimpling of the CuO_2 planes (spacing between the O2,3 and Cu2 layers) in YBa_2Cu_3O_x has been measured as a function of oxygen concentration and temperature by yttrium x-ray…
Tracking primary thermalization events in graphene with photoemission at extreme timescales
I. Gierz, F. Calegari, S. Aeschlimann +7
Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilatio…