papers

Publications (13)

cond-mat.mes-hall2002

Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot

B. Hackens, S. Faniel, F. Delfosse +7

We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3K and 204K. We observe two types of magnetoconductance fluctuations: universal…

cond-mat.mes-hall2018

2D Rutherford-Like Scattering in Ballistic Nanodevices

S. Toussaint, B. Brun-Barrière, S. Faniel +4

Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conduct…

cond-mat.mes-hall2004

Thermopower of Interacting GaAs Bilayer Hole Systems in the Reentrant Insulating Phase near

S. Faniel, E. Tutuc, E. P. De Poortere +5

We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating ph…

cond-mat.mes-hall2016

Electron phase shift at the zero-bias anomaly of quantum point contacts

B. Brun, F. Martins, S. Faniel +11

The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quan…

cond-mat.mes-hall2013

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow +7

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling bet…

cond-mat.mes-hall2011

Structural and electrical characterization of hybrid metal-polypyrrole nanowires

L. Gence, S. Faniel, C. Gustin +5

We present here the synthesis and structural characterization of hybrid Au-polypyrrole-Au and Pt- polypyrrole-Au nanowires together with a study of their electrical properties from…