Publications (26)
Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
Julian Becker, Klaus Gärtner, Robert Klanner +1
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in…
Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon
Jiaguo Zhang, Ioana Pintilie, Eckhart Fretwurst +3
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV pho…
A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation
Joern Schwandt, Eckhart Fretwurst, Erika Garutti +3
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated…
Study of depth-dependent charge collection profiles in irradiated pad diodes
Mohammadtaghi Hajheidari, Massimiliano Antonello, Erika Garutti +3
In this work, charge collection profiles of non-irradiated and irradiated 150 m -type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to…
On the weighting field and admittance of irradiated Si-sensors
Robert Klanner, Joern Schwandt
In this paper the weighting field and the frequency dependence of the admittance Y of np pad sensors irradiated by 24 GeV/c protons to equivalent fluences in the range $Î…
Study of X-ray Radiation Damage in Silicon Sensors
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +4
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the rec…