Publications (9)
Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices
Rupini V. Kamat, Aaron L. Sharpe, Mihir Pendharkar +11
The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graph…
Visualizing orbital magnetism in electron doped rhombohedral multilayer graphene
Owen I. Sheekey, Trevor B. Arp, Benjamin A. Foutty +24
Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime…
Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts
Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett +7
Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channel…
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…
Quantitative determination of twist angle and strain in Van der Waals moiré superlattices
Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar +9
Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these te…
Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices
Mihir Pendharkar, Steven J. Tran, Gregory Zaborski +13
In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angl…