Publications (27)
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
Lixin Liu, Han Yan, Leyi Loh +8
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power d…
Helium atom micro-diffraction as a characterisation tool for 2D materials
Nick von Jeinsen, Aleksandar Radic, Ke Wang +7
We present helium atom micro-diffraction as an ideal technique for characterization of 2D materials due to its ultimate surface sensitivity combined with sub-micron spatial resolut…
High-efficiency WSe photovoltaics enabled by ultra-clean van der Waals contacts
Kamal Kumar Paul, Cullen Chosy, Soumya Sarkar +9
Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (…
An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Ryan J. Wu, Sagar Udyavara, Rui Ma +5
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…
Flame Synthesis of Graphene Films in Open Environments
Nasir K. Memon, Stephen D. Tse, Jafar F. Al-Sharab +6
Few-layer graphene (FLG) is grown on copper and nickel substrates at high rates using a novel flame synthesis method in open-atmosphere environments. Transmittance and resistance p…
Insulator to semi-metal transition in graphene oxide
Goki Eda, Cecilia Mattevi, Hisato Yamaguchi +2
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semicondu…