Publications (6)
Strain Modulated Superlattices in Graphene
R. Banerjee, V. -H. Nguyen, T. Granzier-Nakajima +6
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numer…
Making Atomic-Level Magnetism Tunable with Light at Room Temperature
V. O. Jimenez, Y. T. H. Pham, D. Zhou +9
The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide…
Identification of Electron Donor States in N-doped Carbon Nanotubes
R. Czerw, M. Terrones, J. -C. Charlier +10
Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes…
Hall and field-effect mobilities in few layered -WSe field-effect transistors
N. R. Pradhan, D. Rhodes, S. Memaran +9
Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…
Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States
Y. -M Choi, D. -S. Lee, R. Czerw +10
The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify…
Intrinsic carrier mobility of multi-layered MoS field-effect transistors on SiO
N. R. Pradhan, D. Rhodes, Q. Zhang +4
By fabricating and characterizing multi-layered MoS-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations…