Publications (14)
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…
Early stage of CVD graphene synthesis on Ge(001) substrate
L. Di Gaspare, A. M. Scaparro, M. Fanfoni +6
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopi…
Hug-like island growth of Ge on strained vicinal Si(111) surfaces
L. Persichetti, R. Menditto, A. Sgarlata +2
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singula…
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws
M. Tomellini, M. Fanfoni
The theory of Kolmogorov-Johnson-Mehl-Avrami (KJMA) for phase transition kinetics is subjected to severe limitations concerning the functional form of the growth law. This paper is…
Kinetic theory of cluster impingement in the framework of statistical mechanics of rigid disks
M. Tomellini, M. Fanfoni
The paper centres on the evaluation of the function n(theta)=N(theta)/N0, that is the normalized number of islands as a function of coverage 0<theta<1, given N0 initial nucleation…