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Publications (2)

cond-mat.mes-hall2007

Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Jie Sun, Ruoyuan Li, Chang Zhao +5

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current,…

cond-mat.mes-hall2007

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Jie Sun, Peng Jin, Chang Zhao +5

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal c…

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