Publications (12)
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T. Grange, D. Stark, G. Scalari +9
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain pr…
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…
Hug-like island growth of Ge on strained vicinal Si(111) surfaces
L. Persichetti, R. Menditto, A. Sgarlata +2
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singula…
Single Atom Magnets on Thermally Stable Adsorption Sites: Dy on NaCl(100)
M. Pivetta, M. Blanco-Rey, S. Reynaud +14
We report magnetic bistability in single Dy atoms on NaCl(100) thin films. Individual Dy atoms substituting Na at the surface of the NaCl layer are thermally stable up to at least…
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
M. Montanari, M. Virgilio, C. L. Manganelli +11
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates…
Driving with temperature the synthesis of graphene films on Ge(110)
L. Persichetti, M. De Seta, A. M. Scaparro +8
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
Single-atom electron paramagnetic resonance in a scanning tunneling microscope driven by a radiofrequency antenna at 4 K
T. S. Seifert, S. Kovarik, C. Nistor +3
Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on s…
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-pre…
Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface
L. Persichetti, A. Sgarlata, M. Fanfoni +1
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10…
Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
L. Camilli, M. Galbiati, L. Di Gaspare +9
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal ann…