Publications (4)
Effective masses, Burstein-Moss shift, and bandgap renormalization in degenerate Al-doped ZnO from broadband ellipsometry and Hall measurements
S. Mishra, L. A. Enrique, D. Cespedes +7
A comprehensive methodology is developed to extract electron and hole effective masses in degenerate semiconductors through a simultaneous global fit of carrier concentration depen…
Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations
K. Lizárraga, P. Llontop, L. A. Enrique-Morán +7
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and con…
New Optical Models for the Accurate Description of the Electrical Permittivity in Direct and Indirect Semiconductors
K. Lizárraga, L. A. Enrique-Morán, A. Tejada +6
We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our…
Imaging of bandtail states in silicon heterojunction solar cells
M. Y. Teferi, H. Malissa, A. B. Morales-Vilches +6
Silicon heterojunction (SHJ) solar cells represent a promising technological approach towards higher photovoltaics efficiencies and lower fabrication cost. While the device physics…