Publications (14)
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
R. M. Jock, S. Shankar, A. M. Tyryshkin +7
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
L. A. Tracy, E. H. Hwang, K. Eng +6
By analyzing the temperature () and density () dependence of the measured conductivity () of 2D electrons in the low density (cm) and temperature (0.0…
Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
M. D. Reed, B. M. Maune, R. W. Andrews +15
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involv…
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
K. Eng, R. N. McFarland, B. E. Kane
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Mea…
Compact Modeling of 0.35 micron SOI CMOS Technology Node for 4 K DC Operation using Verilog-A
A. Akturk, K. Eng, J. Hamlet +7
Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more…
Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford +11
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. S…
High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
K. Eng, R. N. McFarland, B. E. Kane
We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron sy…
Modeling of Circuits with Strongly Temperature Dependent Thermal Conductivities for Cryogenic CMOS
J. Hamlet, K. Eng, T. Gurrieri +2
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor…
Effects of a parallel magnetic field on the novel metallic behavior in two dimensions
K. Eng, X. G. Feng, Dragana Popovic +1
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as Ï(n_s,T,B=0)…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Magnetic Gradient Fluctuations from Quadrupolar Ge in Si/SiGe Exchange-Only Qubits
J. Kerckhoff, B. Sun, B. H. Fong +14
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral…
Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
A. M. Jones, E. J. Pritchett, E. H. Chen +15
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fas…
Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
Robert N. McFarland, Tomasz M. Kott, Luyan Sun +2
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degen…