Publications (33)
Conductance asymmetry of graphene pn junction
Tony Low, Seokmin Hong, Joerg Appenzeller +2
Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic +3
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
Scaling Theory of Electrically Doped 2D Transistors
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman +2
Signatures of disorder in the minimum conductivity of graphene
Yang Sui, Tony Low, Mark Lundstrom +1
Screening and interlayer coupling in multilayer graphene field-effect transistors
Yang Sui, Joerg Appenzeller
Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors
Sahej Sharma, Shao-Heng Yang, Himani Jawa +13
Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang +5
High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1
From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
Hesameddin Ilatikhameneh, Ramon B. Salazar, Gerhard Klimeck +2
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices
Zhihong Chen, Joerg Appenzeller
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking
Peng Wu, Joerg Appenzeller
Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component
Peng Wu, Joerg Appenzeller
Experimental Demonstration of an On-Chip CMOS-Integrated 3T-1MTJ Probabilistic Bit -- A P-Bit
Xuejian Zhang, John Arnesh Divakaruni Daniel, Neil Dilley +2
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Cindy Y. Chen, Zheng Sun, Riccardo Torsi +8
Electric field control of interaction between magnons and quantum spin defects
Abhishek Bharatbhai Solanki, Simeon I. Bogdanov, Avinash Rustagi +10
Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics
Hao-Yu Lan, Shao-Heng Yang, Yongjae Cho +10
A novel compound synapse using probabilistic spin-orbit-torque switching for MTJ based deep neural networks
Vaibhav Ostwal, Ramtin Zand, Ronald DeMara +1
Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
Klaus Michael Indlekofer, Joachim Knoch, Joerg Appenzeller
Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure
Tingting Shen, Vaibhav Ostwal, Kerem Y. Camsari +1
Hardware implementation of Bayesian network building blocks with stochastic spintronic devices
Punyashloka Debashis, Vaibhav Ostwal, Rafatul Faria +3
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu +1
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
Yu-Ming Lin, Joerg Appenzeller, Joachin Knoch +2
Substrate Gating of Contact Resistance in Graphene Transistors
Dionisis Berdebes, Tony Low, Yang Sui +2
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs
John Daniel, Zheng Sun, Xuejian Zhang +4
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash +11
Design Rules for High Performance Tunnel Transistors from 2D Materials
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
A Magnetoelectric Memory Device Based on Pseudo-Magnetization
Tingting Shen, Orchi Hassan, Neil R. Dilley +2
Electronic transport properties of a tilted graphene pn junction
Tony Low, Joerg Appenzeller