papers

Publications (8)

cond-mat.mtrl-sci2020

Ionic Charge Distributions in Silicon Atomic Wires

Jeremiah Croshaw, Taleana Huff, Mohamad Rashidi +4

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at…

cond-mat.mtrl-sci2019

Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography

Mohammad Rashidi, Jeremiah Croshaw, Kieran Mastel +3

As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices mus…

physics.app-ph2023

Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H-Si(100)2x1 Surface

Marcel Walter, Jeremiah Croshaw, Samuel Sze Hang Ng +3

Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nano…

cond-mat.mes-hall2023

Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness

Samuel S. H. Ng, Jeremiah Croshaw, Marcel Walter +3

Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically…

cond-mat.mtrl-sci2019

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw +2

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum…

cond-mat.mtrl-sci2024

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon +6

Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band ga…